NTJD4001NT1G
Manufacturer:
On Semiconductor
Mfr.Part #:
NTJD4001NT1G
Datasheet:
Description:
MOSFETs SOT-363 SMD/SMT N-Channel number of channels:2 272 mW 30 V Continuous Drain Current (ID):250 mA 900 pC
| Parameter | Value |
|---|---|
| Voltage Rating (DC) | 30 V |
| Length | 2.2 mm |
| Width | 1.35 mm |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 6 |
| Resistance | 1 Ω |
| Height | 1 mm |
| Packaging | Reel |
| Radiation Hardening | No |
| RoHS | Compliant |
| REACH SVHC | No SVHC |
| Contact Plating | Tin |
| Number of Elements | 2 |
| Current Rating | 250 mA |
| Lifecycle Status | Production (Last Updated: 2 months ago) |
| Max Power Dissipation | 272 mW |
| Power Dissipation | 272 mW |
| Threshold Voltage | 1.2 V |
| Number of Channels | 2 |
| Input capacitance | 33 pF |
| Continuous Drain Current (ID) | 250 mA |
| Rds On Max | 1.5 Ω |
| Drain to Source Voltage (Vdss) | 30 V |
| Turn-On Delay Time | 17 ns |
| Turn-Off Delay Time | 94 ns |
| Element Configuration | Dual |
| Fall Time | 23 ns |
| Rise Time | 23 ns |
| Gate Charge | 900 pC |
| Drain to Source Resistance | 1 Ω |
| Max Junction Temperature (Tj) | 150 °C |
| Nominal Vgs | 1.2 V |
| Gate to Source Voltage (Vgs) | 20 V |
| Drain to Source Breakdown Voltage (Vds) | 30 V |
| Schedule B | 8541210080 |
| Manufacturer Lifecycle Status | ACTIVE (Last Updated: 2 months ago) |
| Gate to Source Threshold Voltage | 800 mV |
| FET Type(Transistor Polarity) | N-Channel |
Stock: 32496
Distributors
pcbx
pcbxUnit Price$0.26930
Ext.Price$0.26930
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $0.26930 | $0.26930 |
| 10 | $0.15730 | $1.57300 |
| 50 | $0.12809 | $6.40450 |
| 100 | $0.10430 | $10.43000 |
| 500 | $0.07694 | $38.47000 |
| 1000 | $0.06694 | $66.94000 |
| 3000 | $0.05318 | $159.54000 |